Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. Results included in this manual are representative of products stressed, and contain data fro mthe past year. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. Licensee agrees that it has received a copy of the content, including software i. D1555 datasheet pdf 3dd1555, npn bipolar transistor.
Maximum ratings are those values beyond which device damage can occur. Posted on march 26, 2019 september 16, 2019 by pinout. Unit icbo collectorbase cutoff current 2n5550 vcb 100 v. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Vcbo 180v, vceo 160v low collector saturation voltage. Electronic manufacturer, part no, datasheet, electronics description. Npn epitaxial planar silicon high voltage transistor, 2n5551 pdf download, 2n5551 download, 2n5551 down, 2n5551 pdf down, 2n5551 pdf download, 2n5551 datasheets, 2n5551 pdf, 2n5551 circuit. The complementary pnp transistor to the 2n5551s is the 2n5401s. It is designed for general purpose high voltage applications and is housed in the sot. Submitted by webmaster on 21 december the resistor r1 is the load resistor and the resistor r2 is the emitter resistor. On semiconductor shall have the right to terminate this agreement upon written notice to licensee if.
You will receive an email when your request is approved. Collector current datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Replacement and equivalent transistor for the 2n5551s. Mmbt5551 features mechanical data ordering information note 4. Mmbt5551m3 npn high voltage transistor the mmbt5551m3 device is a spin. Transistor equivalent circuits and models learning objectives general dc equivalent circuit ac equivalent circuit equivalent circuit of a cb amplifier effect of source resistance r s on voltage gain equivalent circuit of a ce amplifier equivalent circuit of a cc amplifier smallsignal lowfrequency model or representation. So if you are looking for an npn transistor for you amplifier circuit then this transistor might be the right choice. Yes, our product technical engineer will help you on the 2n5551c pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference. Free devices maximum ratings rating symbol value unit collector. Amplifier transistors npn silicon features these are pb. Npn silicon transistor general purpose amplifier high voltage application, download 2n5551 datasheet from. Features gn i t a rv0 61 sot23 package applications high voltage amplification ordering information.
Zxtn5551fl 160v, sot23, npn high voltage transistor summary bvceo 160v bvebo 6v iccont 600ma pd 330mw complementary part number zxtp5401fl description a high voltage npn transistor in a small outline surface mount package. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. Submitted by webmaster on 21 december how to use 2n this output voltage depends on the input voltage vcc, here 12v without the voltage drop across the loads resistor r1. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. Unisonic technologies, 2n5551, high voltage switching transistor. The max collector to emitter voltage is 160v and collector to base. D1555 datasheet pdf 3dd1555, npn bipolar transistor, d1555 pdf, d1555 pinout, d1555 equivalent, data, circuit, d1555 schematic, 3dd1555 transistor. Diodes and transistors pdf 28p this note covers the following topics. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. How to use 2n the resistor r1 is the load resistor and the resistor r2 is the emitter resistor. Complementary pair with 2n5401n ordering information type no. Recent listings manufacturer directory get instant insight into any electronic component. Nothing contained in this agreement limits a party from filing a truthful complaint, or the partys ability to communicate directly to, or otherwise participate in either.
This agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. You can use all semiconductor datasheet in alldatasheet, by no fee and no register. Connect this pages through directly deep link is free datasheet search site. Located in shenzhen, the electronic market center of china. This device is designed for generalpurpose highvoltage amplifiers and gas discharge display drivers. Please consult the most recently issued document before initiating or completing a design. The max collector to emitter voltage is 160v and collector to base voltage is 180v due to which it can be easily used in circuit using under 160 volts. Normally the value of collector current will e given by. Symbol parameter value unit rthja thermal resistance from junction to ambient 200 kw symbol parameter conditions min. A transistor is normally a current amplifier, meaning the current flowing though the base will datashet amplified in the current flowing through the collector. You can replace the 2n5551s with the kst5551 or mmbt5551. Datasheet contains the design specifications for product development. The 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma.